Schottky Barrier Diode Market Analysis & Forecast 2024-2030

Global Schottky Barrier Diode Market is expected to reach USD 3029.23 million by 2030 with CAGR of 5% between 2024 and 2030

Schottky barrier diode simply known as Schottky diode. It is a metal semiconductor diode. Normal semiconductor diodes are formed by creating junction between two semiconductors. Whereas Schottky barrier diode is formed by creating metal-semiconductor junction. Different metals used for Schottky diode are molybdenum, platinum, chromium or tungsten, and certain silicides (e.g., palladium silicide and platinum silicide). Semiconductors Used for Schottky barrier diod n-type semiconductor. The metallic part acts as anode of the diode and n-type semiconductor acts as cathode of the diode.  

Schottky diode has low forward voltage drop than simple diode. It ranges between 0.3- 0.5. Therefore, there is less wastage of energy in the form of heat. Schottky diodes have higher efficiency, low capacitance and low profile surface- mount package. But there are several limitations of this diode. These diodes have low reverse voltage ratings, and their relatively high reverse leakage current. With increasing temperature reverse leakage current again increases, which leads to a thermal instability.  

Due to these important properties, these diodes are used in many applications. These are used in voltage clamping, switched mode power supplies and in sample and hold circuits. Due to lower forward voltage drop, it is used in sensitive applications. For example, these are used in stand-alone photovoltaic (PV) cells to prevent batteries from discharging through the solar panels at night. This is called blocking diodes. The other applications areas of Schottky Barrier Diode are Consumer motor, Telecommunication, Automotive.  

Geographically, Global Schottky Barrier Diode Market is segmented into regions North America, Europe, China, Japan, Southeast Asia, India, Africa and Latin America. Due to growing industries in electronics, telecommunications and automotive sectors, the demand for Schottky diode is increasing. These are the main factors that will fuel Schottky Diode Market during forecast period.  

Profshare Research report includes major player analysis with shares of each player inside market, growth rate and market attractiveness in different end-users / regions. Our study on Schottky Barrier Diode Market helps users to make precise decision to expand their market presence and increase their market share. The competitive landscape in the report offers detailed profiles of the key players in Schottky Barrier Diode Market. The report also covers financial overview, market strategies, new product analysis and marketing trends. Precise Competitive analysis helps businesses to build new product strategies.  

Schottky Barrier Diode Market : Product Type

• Lead type
• Surface mount package

Schottky Barrier Diode Market : End Users/ Applications

• Consumer motor
• Telecommunication
• Automotive

Global Schottky Barrier Diode Market: Companies Covered

• Infineon
• NXP
• PANJIT International Inc
• Taiwan Semi
• Will Semi
• Chongqing Pingwei Enterprise

Geographical analysis of Schottky Barrier Diode Market includes :

• North America
  • U.S.A.
  • Canada
• Europe
  • France
  • Germany
  • Spain
  • UK
  • Rest of Europe
• Asia Pacific
  • China
  • Japan
  • India
  • South East Asia
• Latin America
  • Brazil
• Middle East and Africa

Global Schottky Barrier Diode Market Report delivers a comprehensive analysis of the following parameters:

• Market Forecast for 2024-2030
• Market growth drivers
• Challenges and Opportunities
• Emerging and Current market trends
• Market player Capacity, Production, Revenue (Value)
• Supply (Production), Consumption, Export, Import analysis
• End user/application Analysis

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